| Autor: |
Tan, Seng Ghee, Huang, Che-Chun, Jalil, Mansoor B. A., Chang, Ching-Ray, Cheng, Szu-Cheng |
| Předmět: |
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| Zdroj: |
SPIN (2010-3247); Sep2024, Vol. 14 Issue 3, p1-8, 8p |
| Abstrakt: |
We show in this paper that the technologically relevant field-like spin–orbit torque (SOT) shows resilience against the geometrical effect of electron backscattering. As a device grows smaller in size, the effect of geometry on physical properties like spin torque, and hence switching current could place a physical limit on the continued shrinkage of such a device — a necessary trend of all memory devices (MRAM). The geometrical effect of curves has been shown to impact quantum transport and topological transition of Dirac and topological systems. In our work, we have ruled out the potential threat of line curves degrading the effectiveness of SOT switching. In other words, SOT switching will be resilient against the influence of curves that line the circumferences of defects in the events of electron backscattering, which commonly happens in the channel of modern electronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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