| Autor: |
Kim, Jiyoon, Kim, Hyeonsik, Kim, Yool Guk, Im, Heewoon, Nam, Yuk-Hyun, Lee, Sangho, Park, Jaehyun, Ha, Jaekook, Yoon, Yeo-Geon, Lee, Changhee |
| Předmět: |
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| Zdroj: |
SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, p2007-2010, 4p |
| Abstrakt: |
A 12.4‐inch inverted cadmium‐free electroluminescent quantum dot (QD) light emitting diode (LED) display panel based on metal oxide thin film transistors (TFTs) is demonstrated. The backplane of our panel is fabricated by using multiple steps of photolithography processes, and pixel/scan driver circuits are composed by n‐type indium‐gallium‐zinc oxide TFTs. Especially, each sub‐pixel has internal compensation circuit which compensates the threshold voltage of its own driving TFT. Different from the conventional structure, since our QD LEDs have inverted structures, electroluminescent layers from the electron injection layer to the hole injection layer are constructed by sequential inkjet‐printing processes. Our inverted electroluminescent QD LED display based on metal oxide TFTs is very promising structure for premium large‐format displays for the next generation due to its superb performance and cost‐effectiveness. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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