| Autor: |
Sukhanov, M. A., Aksenov, M. S., Bakarov, A. K., Loshkarev, I. D., Zhuravlev, K. S. |
| Zdroj: |
Optoelectronics Instrumentation & Data Processing; Apr2024, Vol. 60 Issue 2, p229-235, 7p |
| Abstrakt: |
The methods of passivating the mesastructures of photodetectors based on InSb/In Al Sb nBn heterostructures grown by molecular-beam epitaxy are studied. The mesastructures are formed by photolithography and liquid etching. Two different dielectrics, Al O and Si N , are used to passivate the surface of mesastructures. It is shown that the Si N dielectric efficiently passivates the surface of mesastructures, and the bulk current channel is predominant, whereas the surface leakage current prevails in the Al O passivated mesastructures. At small reverse biases, the correlation between the current and surface area of a mesastructure is violated due to the influence of defects. Modeling the current–voltage characteristics of mesastructures at 77 K shows that the major contribution to the dark current is made by the tunneling current of electrons through the In Al Sb barrier. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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