| Abstrakt: |
Thermoelectrics are critical for sustainable energy development because they allow for the direct conversion of waste heat into electricity, improve energy efficiency in a variety of applications, and provide a clean, dependable, and maintenance- free alternative for power generation. In recent days, metal chalcogenides have gained more attention in the field of thermoelectrics. Among the chalcogenide materials, Tin Selenide is a promising material for mid-temperature thermoelectric applications, whereas Bismuth Telluride is mainly known for its room-temperature thermoelectric applications. The combination of these two materials would probably enhance the performance of the thermoelectric generator. The present work deals with bilayer and multilayer thin film deposition of Tin Selenide and Bismuth Telluride on the glass substrates by physical vapor deposition. Then the deposited thin films were given a post-annealing treatment for 30 minutes at 323 K, 423 K, and 523 K. The structure and morphology of the thin films have been studied using X-Ray Diffraction (XRD), Scanning Electron Microscopy(SEM), Field Emission Scanning Electron Microscopy(FESEM) and Atomic Force Microscopy (AFM). The Seebeck Coefficient and Electrical conductivity of the bilayer and multilayer thin films were studied using the Seebeck Coefficient measurement system as temperature as function in a range of 300K to 573 K. The maximum Seebeck Coefficent of -350μV/K was obtained for both bilayer and multilayer thin film at 573 K. The highest electrical conductivity of 220S/m and 170S/m were obtained for bilayer and multilayer thin film respectively. The power factor that gives the thermoelectric generator's performance was calculated from the Seebeck Coefficient and Electrical conductivity. The overall power factor for 573 K annealed films of bilayer and multilayer thin films increases with rise in temperature. The maximum obtained power factor for bilayer and multilayer thin films were 25W/K2m and 18 W/K2m respectively. An increase in the annealing temperature leads to improved thermoelectric performance for both bilayer and multilayer thin films. [ABSTRACT FROM AUTHOR] |
