Autor: |
Abdullaev, D. A., Bobrova, E. V., Milovanov, R. A. |
Předmět: |
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Zdroj: |
Russian Microelectronics; Jun2024, Vol. 53 Issue 3, p217-229, 13p |
Abstrakt: |
Split-gate embedded Flash memory technology has been around for decades and has become the standard application for a wide range of devices such as microcontrollers and smart cards. Among them, due to a number of advantages, SuperFlash (SF) produced by Silicon Storage Technology is the most widely used nonvolatile memory technology. In this paper, the results of a study of the structure of memory cells (MCs) are presented and the principle of their operation, as well as the main technological stages of the production process of forming transistor structures, is discussed. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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