| Autor: |
Li, Yulin, Tian, Yajun, Bao, Lingjie, Cheng, Haoran, Cheng, Qijin |
| Zdroj: |
Journal of Materials Chemistry A; 8/7/2024, Vol. 12 Issue 29, p18487-18497, 11p |
| Abstrakt: |
Molybdenum disulfide (MoS2) is a representative material of transition metal dichalcogenides with a wide range of potential practical applications. However, the low responsivity and relatively short lifespan of MoS2 photodetectors restrict their further development. To enhance the performance of MoS2 photodetectors, we propose a strategy involving defect introduction and surface passivation. Sulphur vacancy defects are introduced in MoS2 through remote hydrogen plasma treatment and surface passivation of MoS2 is achieved by alternating growth of Al2O3/HfO2 passivation layers. The obtained MoS2 photodetector features a high responsivity of 567 A W−1, a specific detectivity of 1.12 × 1010 jones, and a response time of 10.51/15.78 s at a bias of −5 V. Moreover, the obtained MoS2 photodetector maintains excellent stability. It is demonstrated that, after 2 months of placement in an atmospheric environment, the responsivity and the specific detectivity are maintained at approximately 95% of the fresh device, while the response time slightly increases. Finally, the underlying physical mechanism based on the energy band diagram has been proposed to interpret the obtained experimental results. The simple and efficient method proposed in this study for improving the performance of the MoS2 photodetector can open up new avenues for research in MoS2-based photoelectric devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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