| Autor: |
Tursunov, M. O., Iliev, Kh. M., Ismaylov, B. K. |
| Předmět: |
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| Zdroj: |
Physical Sciences & Technology; 2024, Vol. 11 Issue 1/2, p4-12, 9p |
| Abstrakt: |
The properties of KDB-5 grade silicon, including the concentration of electroactive manganese atoms, were studied after doping with manganese using the diffusion method in the temperature range of 1100÷1300 °C. It was observed that as the diffusion temperature increased within this range, the concentration of electroactive manganese atoms decreased. At 1300 °C, the concentration of these atoms became significantly lower than that of the initial boron impurity. We propose that this behavior of manganese atoms may be due to the formation of electrically neutral quasi-molecular complexes between oxygen and manganese atoms located in neighboring lattice sites. During the formation of these electrically neutral complexes, tetrahedral cells of the Si2O++Mn--type are created within the silicon lattice. These cells slightly disturb the lattice periodicity but are significantly different in properties from the elementary silicon cell. The chemical bond in these complexes is ionic-covalent, and the binding energy of the electron differs. As the concentration of these tetrahedral cells increases, various combinations can form, potentially leading to the creation of nanocrystals of a new phase with distinct fundamental parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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