| Autor: |
Xu, Linxin, Zhang, Heqiu, Wu, Yihang, Xia, Xiaochuan, Gu, Haiyan, Zhu, Jiang, Huang, Huishi, Guo, Wenping, Liang, Hongwei |
| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 19, p1-11, 11p |
| Abstrakt: |
In this work, the 3-aminopropyltriethoxysilane (APTES) was functionalized in the gate region of AlGaN/GaN high electron mobility transistor (HEMT) for carbon dioxide sensing. The results indicate that the fixation of APTES on the HEMT gate affects its electrical characteristics. The functionalized HEMT exhibits changes in saturated drain current and threshold voltage. The sensor demonstrates high sensitivity to CO2 in the range of 0.5% to 15%, achieving room temperature sensing compared to previous studies. It shows the highest responsiveness at 60% relative humidity (RH) within the range of 10% to 90% RH, with short response and recovery times of 53 s and 48 s, respectively. The results demonstrate excellent repeatability during continuous testing cycles, consistently returning to the initial baseline with no drift at the end of each cycle. The variation in drain-source current of the device correlates linearly with CO2 concentrations. Through the theoretical analysis of the experimental results, it was found that the sufficient reaction between CO2 and the adsorption sites of HEMT gate region caused the change of two-dimensional electron gas (2DEG) concentration, which subsequently affected the electrical characteristics of HEMT. Its high sensitivity, wide detection range, and exceptional stability make it promising for respiratory disease diagnostics, such as breath analysis. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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