Effect of the Implantation of Ions on the Composition and Electronic Structure of CdS Films.

Autor: Umirzakov, B. E., Sodikjanov, J. Sh., Isakhanov, Z. A., Abduvayitov, A. A.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Jun2024, Vol. 18 Issue 3, p594-597, 4p
Abstrakt: A method of low-energy ion implantation is used for the first time to create oxide layers on the surface of a CdS material. After annealing at a temperature of 800 K of CdS implanted with ions with an energy of E0 = 1 keV at a dose of Dsat ≈ 8 × 1016 cm–2, a three-component film of CdO0.7S0.3 is formed, and after annealing at 900 K a CdO film is formed. Using Auger-electron spectroscopy, photoelectron spectroscopy, and light-absorption spectroscopy, the composition, parameters of the energy bands, optical parameters, and densities of state of valence electrons of CdO0.7S0.3 and CdO nanofilms are determined. The results of the study allow one to consider the possibility of using CdO0.7S0.3 films as transparent films and contact layers in various devices including solar cells. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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