Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions.
| Autor: | Nguyen, Manh-Cuong, You, Jiwon, Sim, Yonguk, Choi, Rino, Jeong, Doo Seok, Kwon, Daewoong |
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| Zdroj: | Materials Horizons; 7/21/2024, Vol. 11 Issue 14, p3307-3315, 9p |
| Databáze: | Complementary Index |
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