A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility.
Autor: | Vu, Tuan V., Vi, Vo T. T., Hiep, Nguyen T., Hoang, Khanh V., Kartamyshev, A. I., Phuc, Huynh V., Hieu, Nguyen N. |
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Zdroj: | RSC Advances; 2024, Vol. 14 Issue 30, p21982-21990, 9p |
Databáze: | Complementary Index |
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