| Autor: |
Kim, Kyung Do, Ryoo, Seung Kyu, Park, Han Sol, Choi, Seungheon, Park, Tae Won, Yeom, Min Kyu, Hwang, Cheol Seong |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/14/2024, Vol. 136 Issue 2, p1-12, 12p |
| Abstrakt: |
This study investigates the stability of the (Hf,Zr)O2 (HZO) and AlScN thin films against the depolarization effect. In order to adversely interfere with the polarization screening of ferroelectric (FE) film and induce the depolarization effect, an Al2O3 film was inserted between the TiN bottom electrode and the FE film. Subsequently, to minimize charge injection through Al2O3 films, the double remanent polarization–voltage (2Pr–V) curve was measured employing voltage pulses with 1 μs-length. As the thickness of the Al2O3 film increased, the charge injection through the Al2O3 film decreased, leading to a decrease in the slope of the 2Pr–V curve. The magnitude of the depolarization field applied to the FE film was determined by simulating the 2Pr–V curve using an equivalent circuit model. Subsequently, the proportion of reversed domains during the delay period due to the depolarization effect was measured. It was revealed that HZO films exhibited vulnerability to the depolarization effect, with 16% of domains being reversed. On the other hand, AlScN films demonstrated superior stability, with polarization loss of less than 1%. Ultimately, it was revealed that AlScN films demonstrated superior stability against the depolarization effect compared to HZO films due to their higher coercive field and more uniform polarization distribution across the film area. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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