| Autor: |
Khrypunov, G. S., Harchenko, M. M., Meriuts, A. V., Carlin, J. F., Makhlai, V. A., Herashchenko, S. S., Abashin, S. L., Surovitskiy, S. V., Pudov, A. O., Dobrozhan, A. I. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2024, Vol. 16 Issue 3, p1-8, 8p |
| Abstrakt: |
The influence of pulsed helium plasma irradiation, with a 10 μs duration and a surface energy load of 0.2 MJ m-2, on the elemental and phase composition, surface morphology and crystal structure of thin-film heterosystems based on CdS/CdTe was studied. The cadmium sulphide and cadmium telluride layers were deposited by condensation via a hot wall method onto a glass substrate covered with an FTO layer. It was found that after one pulse, the device structure remains in working condition. An increase in the irradiation dose leads to surface sputtering, the formation of through pores 0.5 – 2 μm in size, and a microcracks network with two characteristic scales. One crack network is formed in the glass substrate, and the second network is formed with cracks in the CdTe film. It is shown that the thermal effect of plasma stimulates the diffusion of sulphur; as a result, the proportion of CdTe1-xSx solid solutions formed in the process of obtaining the CdS/CdTe heterosystem increases. In addition, the sulphur content increases in these solid solutions, which leads to their decomposition with the separation of the CdS1-yTey solid solution phase. These solid solutions migrate to the CdTe surface through cracks and are observed as separate crystals. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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