Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing.
| Autor: | Huifan Xiong, Xuesong Lu, Xu Gao, Yuchao Yan, Shuai Liu, Lihui Song, Deren Yang, Xiaodong Pi |
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| Zdroj: | Semiconductor Technology / Bandaoti Jishu; Jul2024, Vol. 45 Issue 7, p1-7, 7p |
| Databáze: | Complementary Index |
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