| Autor: |
Prozheev, Igor, Heikkinen, Tanja, Makkonen, Ilja, Mizohata, Kenichiro, Tuomisto, Filip |
| Zdroj: |
Japanese Journal of Applied Physics; Jul2024, Vol. 63 Issue 7, p1-6, 6p |
| Abstrakt: |
We report positron annihilation results on in-grown and proton-irradiation-induced vacancy defects in AlN single crystals grown by physical vapor transport. The samples were irradiated with 100 keV H+ ions to varying fluences in the range of 5 × 1014 − 2 × 1018 ions cm–2. Doppler broadening of annihilation radiation was recorded in as-grown and irradiated samples with a slow positron beam with varying implantation energy. Doppler results combined with first principles theoretical calculations show that the 100 keV H+ irradiation introduces isolated VAl on the ion track and VN-rich vacancy clusters at the end of the ion range. The results suggest that the excess amount of detected VN originates from a high concentration of in-grown VN. So far, these defects have been considered to be unidentified negative ion-like defects in AlN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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