| Autor: |
Mu, Yanqi, Yang, Jia, Xie, Guancai, Wang, Zhenxing, Guo, Beidou, Gong, Jian Ru |
| Předmět: |
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| Zdroj: |
Advanced Functional Materials; 7/3/2024, Vol. 34 Issue 27, p1-10, 10p |
| Abstrakt: |
Two‐dimensional (2D) materials have attracted extensive attention in the field of photodetection thanks to their unique physical properties. Among them, the PdSe2 nanoflake shows great potential. However, the performance of the PdSe2‐based photodetector with a hetero‐type heterojunction remains poor due to the severe tunneling‐assisted interfacial recombination of photogenerated electron‐hole pairs in the thin bilateral‐depletion heterojunctions. In this work, a novel photodetector with a α‐In2Se3/PdSe2 homo‐type heterojunction for both high‐performance and broadband detection from visible to short‐wave infrared is constructed. The high‐performance of the photoresponsivity of 4.64 × 103 A·W−1, the external quantum efficiency of 1.08 × 106%, and the specific detectivity of 1.55 × 1014 Jones at 532 nm is the result of the homo‐type unilateral‐depletion junction which can promote the effective separation of photogenerated electron‐hole pairs compared to the hetero‐type. Also, adjusting the α‐In2Se3 ferroelectric polarization state further optimizes the unilateral depletion region. In addition, the photodetector can work in a self‐powered mode. This study suggests that the PdSe2‐based homo‐type device has great application potential in the field of 2D optoelectronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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