| Autor: |
Ding, Hao, Ito, Keita, Endo, Yasushi, Takanashi, Koki, Seki, Takeshi |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 9/27/2024, Vol. 57 Issue 38, p1-10, 10p |
| Abstrakt: |
This paper reports the systematic study on the structure, magnetic properties and magnetoelastic properties for the Fe100− x Ga x (001) thin films epitaxially grown on the different substrates of GaAs(001) and MgO(001) using the sputtering technique. The alloy composition dependence of effective magnetoelastic coupling coefficient B eff along the FeGa [110] direction indicated that the largest magnetoelastic coupling was obtained for the Fe–Ga layer with x = 30 grown on the MgO substrate, which was evaluated to be B eff = − 9.4 × 107 erg cm−3. Considering the results of structural analysis and magnetization measurement, the different crystallite sizes depending on the kind of substrate may give rise to the different magnetoelastic coupling strengths between the Fe–Ga layers on the MgO and the GaAs. The magnetostriction along the Fe–Ga [111] direction λ 111 was also estimated with the assumption of plausible elastic property of Fe–Ga, and showed the values comparable to the reported value of bulk Fe–Ga. This means the large magnetostriction can be obtained even for the Fe–Ga thin films epitaxially grown not only on the GaAs(001) but also on the MgO(001). The findings in this work will give a guideline for designing spintronic applications with a Fe–Ga layer exhibiting a large magnetoelastic coupling. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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