Oxidation Performance of Nano-Layered (AlTiZrHfTa)N x /SiN x Coatings Deposited by Reactive Magnetron Sputtering.

Autor: Touaibia, Djallel Eddine, Achache, Sofiane, Bouissil, Abdelhakim, Parent, Fabrice, Ghanbaja, Jaafar, Gorbunova, Alina, Postnikov, Pavel S., Chehimi, Mohamed Mehdi, Schuster, Frederic, Sanchette, Frederic, El Garah, Mohamed
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Zdroj: Materials (1996-1944); Jun2024, Vol. 17 Issue 12, p2799, 21p
Abstrakt: This work uses the direct current magnetron sputtering (DCMS) of equi-atomic (AlTiZrHfTa) and Si targets in dynamic sweep mode to deposit nano-layered (AlTiZrHfTa)Nx/SiNx refractory high-entropy coatings (RHECs). Transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are used to investigate the effect of Si addition on the oxidation behavior of the nano-layered coatings. The Si-free nitride coating exhibits FCC structure and columnar morphology, while the Si-doped nitride coatings present a FCC (AlTiZrHfTa)N/amorphous-SiNx nano-layered architecture. The hardness decreases from 24.3 ± 1.0 GPa to 17.5 ± 1.0 GPa because of the nano-layered architecture, whilst Young's modulus reduces from 188.0 ± 1.0 GPa to roughly 162.4 ± 1.0 GPa. By increasing the thickness of the SiNx nano-layer, kp values decrease significantly from 3.36 × 10−8 g2 cm−4 h−1 to 6.06 × 10−9 g2 cm−4 h−1. The activation energy increases from 90.8 kJ·mol−1 for (AlTiZrHfTa)Nx nitride coating to 126.52 kJ·mol−1 for the (AlTiZrHfTa)Nx/SiNx nano-layered coating. The formation of a FCC (AlTiZrHfTa)-Nx/a-SiNx nano-layered architecture results in the improvement of the resistance to oxidation at high temperature. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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