| Autor: |
Dolguikh, M. V., Muravjov, A. V., Peale, R. E., Klimov, M., Kuznetsov, O. A., Uskova, E. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/2005, Vol. 98 Issue 2, p023107, 7p, 11 Graphs |
| Abstrakt: |
A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte Carlo simulation of hot-hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical hole transport in the presence of an in-plane magnetic field. Population inversion on intersubband transitions arises due to light-hole accumulation in E⊥B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows a remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical-vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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