| Autor: |
Lai, Bo, Qi, Runze, Zhang, Zengbo, Wang, Zhanshan |
| Předmět: |
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| Zdroj: |
Coatings (2079-6412); Jun2024, Vol. 14 Issue 6, p659, 8p |
| Abstrakt: |
Yb/Al multilayer films exhibit excellent theoretical reflectivity in the 54–90 nm wavelength range. This study attempted to incorporate 1.5% wt.% of Si impurities into Al to suppress the crystallization of Al, reduce interfacial roughness, and enhance the actual reflectivity of the prepared Yb/Al multilayer films. Internal microstructure changes in the film layers before and after Si impurity doping were investigated using GIXRR, AFM, and XRD techniques. The reflectivity of two types of multilayer films, Yb/Al (1.5 wt.% Si) and Yb/Al (pure), was tested to evaluate the effect of Si impurity on film performance. The reflectivity of Yb/Al (1.5 wt.% Si) multilayers compared to Yb/Al (pure) multilayers increased by approximately 4%. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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