| Autor: |
Zhang, Shuren, Yue, Qihui, Son, Woosung, Peng, Bangyin, Jou, Mingjong |
| Předmět: |
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| Zdroj: |
SID Symposium Digest of Technical Papers; Apr2024 Suppl 1, Vol. 55 Issue 1, p679-682, 4p |
| Abstrakt: |
In this work, we report dual‐gate a‐Si:H TFTs using indium tin oxide (ITO) as top‐gate electrodes for achieving high‐refresh‐rate LCDs. The dual‐gate TFTs exhibit higher on‐currents than conventional TFTs by 24‐42% depending on the width of the top ITO gate on the passivation layer, which can significantly improve charging rate and picture quality for LCDs with a refresh rate above 240 Hz. However, the off‐current deteriorates with the increase of ITO width which is bad for image stick and leading to flickering issues. For the channel length of 5.2 µm, the ITO width of 2.5 µm would be the optimal condition. The influence of the thickness between the back channel and the ITO top gate is also investigated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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