| Autor: |
Jung, Soo Young, Choi, Hyung-Jin, Lee, Jun Young, Kim, Min-Seok, Ning, Ruiguang, Han, Dong-Hun, Kim, Seong Keun, Won, Sung Ok, Lee, June Hyuk, Jang, Ji-Soo, Jang, Ho Won, Baek, Seung-Hyub |
| Zdroj: |
Electronic Materials Letters; Jul2024, Vol. 20 Issue 4, p484-490, 7p |
| Abstrakt: |
Epitaxial buffer layers such as ceria (CeO2)/yttria-stabilized zirconia (YSZ) allow the direct integration of functional oxide single crystal thin films on silicon (Si). Microcracks in the buffer layer, often evolving from the large thermal tensile stress, are detrimental to the integration of high-quality complex oxide thin films on Si. In this study, we investigated the evolution of microcracks in sputter-grown epitaxial CeO2 layers by systematically varying the sputtering power and thickness of CeO2 thin films on YSZ single crystal (low thermal mismatch) and YSZ-buffered Si (high thermal mismatch) substrates. Using a plane stress model, we revealed that as the sputtering power increased, the epitaxial CeO2 thin films tended to be more compressively strained at the growth temperature. This could accommodate the tensile strain arising during cooling to room temperature, thereby suppressing the evolution of microcracks. Our result provides not only a method to suppress microcracks in the oxide heterostructure on Si, but also a tool to control their strain state, by controlling their growth parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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