| Autor: |
Erenburg, Simon, Bausk, Nikolai, Nikiforov, Aleksandr, Yakimov, Andrei, Dvurechenskii, Anatolii, Kulipanov, Gennadii, Nikitenko, Sergei |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2005, Vol. 772 Issue 1, p585-586, 2p |
| Abstrakt: |
Surface sensitive XAFS (X-ray absorption fine structure) measurements based on total electron yield and fluorescence yield detection modes have been performed for pseudomorphous Ge films and clusters deposited on Si(001) and Si(111) substrate via molecular beam epitaxy (MBE). Deposited Ge islands reveal quantum dots (QD) properties. The influence of Ge nanoislands sizes and shape, Si substrate orientation and pretreatment, and MBE deposition conditions on the QD microstructure parameters are studied. The local microstructure parameters are linked to heterostructures morphology. Adequate models of spatial structure are suggested and discussed. The appearance of free levels at a depth of the order of 0.4 eV from the top of the Ge valency band for the containing QD samples doped with boron is revealed. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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