| Autor: |
Marko, I. P., Andreev, A. D., Sweeney, S. J., Adams, A. R., Krebs, R., Deubert, S., Reithmaier, J. P., Forchel, A. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2005, Vol. 772 Issue 1, p681-682, 2p |
| Abstrakt: |
Analysis of the temperature dependencies of the threshold current and of the unamplified spontaneous emission in 0.98-μm and 1.3-μm InAs/GaAs quantum dot lasers as well as high hydrostatic pressure studies show that the recombination and loss mechanisms are wavelength dependent. The results indicate that the temperature dependence of the threshold current is due to two non-radiative recombination processes. Auger recombination is very important in the 1.3-μm devices at room temperature and causes their temperature sensitivity. In the 980 nm lasers Auger recombination is negligible, but thermal escape of carriers out of the dots followed by defect related recombination leads to an increase of the threshold current with temperature. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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