| Autor: |
Utamuradova, Sharifa B., Rakhmanov, Dilmurod A., Abiyev, Afsun S. |
| Předmět: |
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| Zdroj: |
East European Journal of Physics; 2024, Issue 2, p380-383, 4p |
| Abstrakt: |
In this work, the influence of alpha particles, protons and gamma rays on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. N-type silicon (KEF-40) was used for the study. The samples were irradiated with protons with a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 μA, irradiated with alpha particles with a dose of 6×1014 cm-2 with an energy of 800 keV and a current of 0.5÷1 μA and γ-60Co quanta with a flux intensity of ~ 3.2×1012 quantum/cm2·s. Based on the results of X-ray diffraction analysis, it was established that distortions, vacancies and amorphization of lattice parameters that arose after irradiation lead to an increase in lattice parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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