Novel high-gain narrowband antenna based on ENZ SIW structure and shorting pin.

Autor: Dash, Rajesh Kumar, Kumari, Sadhana, Choudhury, Balamati
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Zdroj: Analog Integrated Circuits & Signal Processing; Jun2024, Vol. 119 Issue 3, p455-462, 8p
Abstrakt: This paper provides an idea for designing a high-gain narrow-band substrate integrated waveguide (SIW) antenna. The high gain is achieved due to the epsilon-near-zero (ENZ) technique, and narrow-band performance is achieved due to impedance matching provided by a pair of symmetric shorting pins. In this paper, SIW is used near its cut-off frequency to realize the ENZ characteristics. Further, two symmetric open stubs are incorporated to reject the out out-of-band frequency signal. To attain narrow-band performance, pair of symmetric shorting pins are employed in place of the conventional way, i.e., tapered line transition to couple the energy from microstrip to SIW. To validate the proposed concept, a high-gain narrow-band SIW antenna has been designed for a frequency band on a 0.79 mm thick RT- DUROID 5880 substrate. Within the 7.77–8.07 GHz band, the proposed antenna radiates with gain and radiation efficiency of 6.51 dBi and 96%, respectively. The measured and simulated results are found to be consistent. The overall size of the proposed antenna is 28 X 22 mm2. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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