| Autor: |
Kaul, Aapurva, Rewari, Sonam, Nand, Deva |
| Předmět: |
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| Zdroj: |
Microsystem Technologies; May2024, Vol. 30 Issue 5, p599-611, 13p |
| Abstrakt: |
In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC CGAA FET) is proposed for reduced gate leakage analog application. The proffered device is also compared with a conventional Nanowire FET (NW-FET) and Dual Metal Hetero-Dielectric Cylindrical Gate All Around FET (DM-HD CGAA FET) so as to indicate the device efficiency of HD-MC CGAA FET. Both DM-HD CGAA FET and HD-MC CGAA FET have a combined vacuum dielectric at the drain with a silicon dioxide (SiO2) gate dielectric at the source. The structure has a symmetric gate oxide that is excellent for low power applications because of its considerably lower BTBT and OFF state gate leakages. GIDL of the HD-MC CGAA FET is lower, suggesting that this device has better insulation against leakages and its ION/IOFF ratio is higher making it better for digital applications. Based on the qualitatively obtained results, ION/IOFF ratio of HD-MC CGAA FET is 856 times better than NW-FET and 309 times better than DM-HD CGAA FET. GIDL current of HD-MC CGAA FET is measured to be 10–14 A as compared to 10–12 A of DM-HD CGAA FET and 10–10 A of NW-FET. It has also been entrenched that HD-MC CGAA FET has more promising IDS, gm, gd, GIDL, hole concentration, Transconduction Generation Factor and ION/IOFF ratio than the existing NW-FET and DM-HD CGAA FET making it highly applicable for low leakage and high frequency digital and analog application. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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