| Autor: |
Voigt, Cooper A., Tian, Mengkun, Peacock, Ryan, Wagner, Brent K., Vogel, Eric M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/7/2024, Vol. 135 Issue 21, p1-9, 9p |
| Abstrakt: |
Indium selenide is a polymorphous material system that has attracted considerable attention due to the outstanding electronic, optical, ferroelectric, and antiferroelectric properties of its various crystalline phases; however, this polymorphism adds a layer of complexity to the analysis of Raman and x-ray photoelectron (XPS) data of these materials. In this report, a method of quantitative analysis of combined Raman and XPS data is developed to determine the stoichiometry of indium selenide thin films, as well as the phase fraction of β-In2Se3, γ-In2Se3, and κ-In2Se3 within the films. A 13:1 ratio of the indium to selenium sensitivity factors (σIn/σSe = 13) was found to yield the most accurate stoichiometry results. Further structural characterization of the κ-In2Se3 film was performed and points to its existence in these films as a distinct phase, rather than strained γ-In2Se3. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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