| Autor: |
Kaneko, Mitsuaki, Matsuoka, Taiga, Kimoto, Tsunenobu |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 5/28/2024, Vol. 135 Issue 20, p1-7, 7p |
| Abstrakt: |
The Hall electron mobility in sulfur-doped 4H-SiC over a wide range of S concentration was investigated. Sulfur (S) works as a double donor in SiC. The electron concentration in the S + -implanted layers saturates when the S concentration exceeds 1 × 10 18 cm − 3 and the net donor concentration of the S + -implanted layer with S concentration of 1 × 10 19 cm − 3 is 4 × 10 18 cm − 3 , indicating that the solubility or activation limit of S + -implanted SiC is about 2 × 10 18 cm − 3 . The S + -implanted SiC with a S concentration of 1 × 10 18 cm − 3 exhibits an electron mobility of 598 cm 2 /V s, which is more than twice as high as that in N-doped SiC with the same doping concentration (268 cm 2 /V s). The temperature dependence of the electron mobility in S + -implanted SiC is reproduced in the wide temperature range by the calculation of the electron mobility adopting the helium atom model for neutral-impurity scattering. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
