| Autor: |
Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Chang, Carl W., Gonzalez, José M., Rajgopal, Srihari, Prokop, Norman F., Greer, Lawrence C., Lukco, Dorothy, Maldonado-Rivera, Shamir, Adams, Christina M. |
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| Zdroj: |
Advancing Microelectronics; 2024, Vol. 51 Issue 2, p32-37, 6p |
| Abstrakt: |
This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive "back end of line" (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of "Generation 12" SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype "Generation 12" chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based electric motor drives. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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