| Abstrakt: |
ZnO has been explored using different approaches such as doping, nanostructuring, 2D confinement, and introduction of interface effects for improving thermoelectric performance and lowering thermal conductivity. Herein, the lattice thermal conductivity (κL) of ZnO determined from Raman thermometry, the 3ω-method and simulation using three-phonon scattering is presented. The average Debye temperature (D) of A1(TO) and E2(high) modes estimated utilizing bond-order–length–strength correlation with local bond averaging effects is ∼422 K. The average κL of ZnO calculated using the theoretical coefficient of Slack's equation, D, and Grüneisen parameter (γ) in Slack's equation is 2.75 W m−1 K−1, which is significantly lower than the κL ∼ 50.9 W m−1 K−1 simulated by considering the Perdew–Burke–Ernzerhof functional with Hubbard and non-analytical corrections. The coefficient of Slack's equation is determined from the κL ∼ 31 W m−1 K−1 of ZnO measured using the 3ω-method for the accurate estimation of the κL. The experimental coefficient of Slack's equation with Raman thermometry data yields κL ∼ 50.6 W m−1 K−1, which is higher than the value obtained using the 3ω-method but consistent with the theoretical value. Thus, three-phonon anharmonicity describes the κL of ZnO associated with Raman scattering. The method adopted to calculate κL will help for the in-depth analysis of phonon dynamics and the design of wurtzite-ZnO-related power electronics. [ABSTRACT FROM AUTHOR] |
