| Autor: |
Wu, Songhao, Ma, Chicheng, Yang, Han, Liu, Zichun, Ma, Yuanxiao, Yao, Ran, Zhang, Yiyun, Yang, Hua, Yi, Xiaoyan, Wang, Junxi, Wang, Yeliang |
| Předmět: |
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| Zdroj: |
CrystEngComm; 5/21/2024, Vol. 26 Issue 19, p2544-2550, 7p |
| Abstrakt: |
High-quality β-(AlxGa1−x)2O3 thin films are fabricated through face-to-face annealing on sapphire substrates covered with epitaxial Ga2O3. Al atoms during high-temperature annealing are uniformly diffused from the sapphire substrate into the overlying Ga2O3 for (AlxGa1−x)2O3 formation. The transformation of the (−201) crystal facet into the (300) crystal facet is observed, which is likely due to the lowest E (hkl)surf of the (100) surface. The crystallinity can be further improved with increasing the annealing temperatures and the duration of the thermal treatment under a tolerance limit of 1400 °C, which also increases the Al content to 0.68 in β-(AlxGa1−x)2O3 with a bandgap of up to 6.0 eV. As a result, highly-crystalline (300)-plane β-(AlxGa1−x)2O3 is obtained with a low X-ray diffraction (XRD) full width at half maximum (FWHM) at around 0.08° (288 arcsec). These findings contribute to the understanding of the preparation of high-quality β-(AlxGa1−x)2O3 films on sapphire substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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