| Autor: |
Bolim You, Jeechan Yoon, Yuna Kim, Mino Yang, Jina Bak, Jihyang Park, Un Jeong Kim, Myung Gwan Hahm, Moonsang Lee |
| Zdroj: |
Journal of Materials Chemistry C; 5/14/2024, Vol. 12 Issue 18, p6596-6605, 10p |
| Abstrakt: |
Neuromorphic electronics are gaining significant interest as components of next-generation computing systems. However, it is difficult to develop flexible neuromorphic electronics for implementation in various edge applications such as bio-implantable electronics and neuroprosthetics. In this study, we present a reconfigurable 2D tellurene (Te) artificial synaptic transistor on a flexible substrate for neuromorphic edge computing. Single-crystalline 2D Te flexible synaptic transistors exhibit potentiation and depression modulated by gate pulses with an extremely low power consumption of 9 fJ, 93 effective multilevel states, excellent linearity and symmetry, and an accuracy of 93% in recognizing the Modified National Institute of Standards and Technology (MNIST) patterns. Furthermore, it was observed to be a flexible synaptic transistor with outstanding gate tunability and endurance characteristics, even under a 2% curvature in both the concave and convex states. We believe a robust 2D Te flexible artificial synapse will effectively function as a building block for wearable neuromorphic edge computing applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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