| Autor: |
Singh, Neetesh, Lorenzen, Jan, Sinobad, Milan, Wang, Kai, Liapis, Andreas C., Frankis, Henry C., Haugg, Stefanie, Francis, Henry, Carreira, Jose, Geiselmann, Michael, Gaafar, Mahmoud A., Herr, Tobias, Bradley, Jonathan D. B., Sun, Zhipei, Garcia-Blanco, Sonia M., Kärtner, Franz X. |
| Zdroj: |
Nature Photonics; May2024, Vol. 18 Issue 5, p485-491, 7p |
| Abstrakt: |
Chip-scale, high-energy optical pulse generation is becoming increasingly important as integrated optics expands into space and medical applications where miniaturization is needed. Q-switching of the laser cavity was historically the first technique to generate high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fibre lasers, especially in the long wavelength range >1.8 µm, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement that enables a small form factor becomes an impediment to high-energy applications owing to small optical mode cross-sections. Here we demonstrate a high-energy silicon photonics-based passively Q-switched laser with a compact footprint using a rare-earth gain-based large-mode-area waveguide. We demonstrate high on-chip output pulse energies of >150 nJ and 250 ns pulse duration in a single transverse fundamental mode in the retina-safe spectral region (1.9 µm), with a slope efficiency of ~40% in a footprint of ~9 mm2. The high-energy pulse generation demonstrated in this work is comparable to or in many cases exceeds that of Q-switched fibre lasers. This bodes well for field applications in medicine and space. An integrated high-energy laser that combines a passively Q-switched laser cavity based on a silicon-nitride photonic integrated circuit with an optically pumped gain layer consisting of thulium-doped alumina is reported, representing a pivotal advancement in integrated pulsed lasers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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