| Abstrakt: |
As ICs scale up, a problem that arises at the lower levels of the plating system is that the resistance of the copper traces increases rapidly as the size decreases. This is due to the increase in the contribution of electron scattering on the surface and at grain boundaries. In addition, copper lines require fixed-thickness barrier layers to prevent copper from diffusing into the low-k dielectric. When the cross section of the tracks is reduced, the contribution of the barrier layers to the track resistance is excxii essively high. In addition, when the track width is less than 10 nm, the resistance of copper to electromigration is insufficient. Therefore, it is necessary to look for alternative materials to replace copper, which will provide strong resistance to electromigration and low track resistance. The most promising candidates are Ru, Mo, Rh, and Ir. The advantages and disadvantages of these materials are discussed in this study. [ABSTRACT FROM AUTHOR] |
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