Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides.

Autor:	Ezhovskii, Yu. K., Mikhailovskii, S. V.
Předmět:	TANTALUM oxide NIOBIUM oxide SILICA ATOMIC layer deposition TANTALUM films SILICON oxide
Zdroj:	Russian Microelectronics; Feb2024, Vol. 53 Issue 1, p65-69, 5p
Abstrakt:	The results of studying the processes of formation of silicon oxide nanolayers by the method of molecular layering (atomic layer deposition) on the surface of films of tantalum and niobium oxides obtained by electrochemical oxidation of the corresponding metals are presented. Studying the electrical strength of metal-dielectric-metal (MDM) structures based on tantalum and niobium oxides shows that the introduction of an additive dielectric layer (SiO2) allows us to significantly increase the electrical strength of these structures. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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