Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter.

Autor:	Golikov, O. L., Zabavichev, I. Yu., Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.
Předmět:	BIPOLAR transistors ELECTRON transport TRANSISTORS SUPERLATTICES CURRENT-voltage characteristics
Zdroj:	Russian Microelectronics; Feb2024, Vol. 53 Issue 1, p44-50, 7p
Abstrakt:	A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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