Autor: |
Basler, Michael, Mönch, Stefan, Reiner, Richard, Benkhelifa, Fouad, Quay, Rüdiger |
Předmět: |
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Zdroj: |
Electronics (2079-9292); Apr2024, Vol. 13 Issue 7, p1351, 9p |
Abstrakt: |
In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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