First Principle Study on Schottky Barrier at Ni/Graphene/4H-SiC Interface.

Autor:	Wang, Congcong, Jiang, Zhenyu, Huang, Yingjie, Wu, Siyu
Zdroj:	Journal of Physics: Conference Series; 2024, Vol. 2737 Issue 1, p1-7, 7p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu