| Autor: |
Zeng, Jiejun, Sun, Xiaoyue, Liu, Yang, Jin, Wangxiao, He, Siyu, Zhu, Xitong, Niu, Kai, Sun, Guolong, Li, Jinyi, He, Haiping, Sun, Tulai, Ye, Zhizhen, Jin, Yizheng |
| Zdroj: |
Nature Photonics; Apr2024, Vol. 18 Issue 4, p325-333, 9p |
| Abstrakt: |
High-performance deep-red light-emitting diodes (LEDs) are important for biomedical and agricultural applications. However, the development of bright and stable solution-processed deep-red LEDs remains challenging. Here we design a switchable interfacial deprotonation reaction between the perovskite and electron-transporting layer to fabricate high-quality CsPbI3 perovskite films, leading to stable and bright deep-red LEDs. Our approach starts with a precursor solution containing guanidine hydroiodide and a layer of alkaline zinc hydroxide. On annealing, the interfacial reaction is switched on, leading to the formation of high-quality CsPbI3. The alkaline zinc hydroxide layer is simultaneously converted in situ to alkalescent ZnO, which prevents the formation of the undesirable yellow-phase CsPbI3 perovskite. As a result, our perovskite LEDs based on CsPbI3 demonstrate a long half-lifetime of approximately 33.6 h under a driving current density of 100 mA cm–2 and an exceptionally high radiance of around 1,980 W sr−1 m–2. Moreover, by partly substituting iodide with bromide, we achieve bright deep-red perovskite LEDs with an emission wavelength of 691 nm and an operational half-lifetime of 50.3 h at 100 mA cm–2. A switchable deprotonation reaction at the interface between the perovskite and electron-transporting layer enables bright deep-red perovskite LEDs emitting at 691 nm with a half-lifetime of about 50.3 h at 100 mA cm–2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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