| Autor: |
Geng, Bowen, Zhang, Feng, Huang, Congcong, He, Lihua, Li, Chengtai, Duan, Shuming, Ren, Xiaochen, Hu, Wenping |
| Zdroj: |
Journal of Materials Chemistry C; 4/14/2024, Vol. 12 Issue 14, p5012-5018, 7p |
| Abstrakt: |
Organic single-crystal semiconductors, characterized by their well-ordered long-range structure, facilitate efficient charge carrier transmission, resulting in a notable improvement in the functionality of organic optoelectronic devices, as illustrated by organic field-effect transistors (OFETs). Nevertheless, the widespread utilization of OFETs, especially in low-voltage operations (<5 V), is impeded by their suboptimal electrical performance. This work employs lattice strain engineering to enhance OFET performance utilizing inch-sized single crystals of the organic semiconductor C8-BTBT. By modulating the shear speed during the solution shearing process, lattice strain is induced in the C8-BTBT crystals, leading to a reduction in π–π stacking distance and thinner crystals, thereby mitigating injection resistance and enhancing charge transport capabilities. The lattice-strained single crystals demonstrate a significant enhancement in mobility, reaching 8.7 cm2 V−1 s−1 at −3 V in low-voltage single-crystal OFETs, surpassing the highest values among similar molecules based on high-k dielectrics. Additionally, inch-scale organic single crystals display outstanding uniformity, with a 2.99% mobility coefficient of variation of 30 devices. This work underscores the potential of lattice strain engineering for large-scale, high-performance, low-power organic circuit applications, paving the way for the development of cost-effective and efficient electronic devices based on organic materials. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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