| Autor: |
Jiang, Ming-Xun, Yang, Sang-Ren, Tsao, I-Yu, Wardhana, Bayu Satriya, Hsueh, Shih-Feng, Jang, Jason Shian-Ching, Hsin, Cheng-Lun, Lee, Sheng-Wei |
| Předmět: |
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| Zdroj: |
Nanomaterials (2079-4991); Mar2024, Vol. 14 Issue 6, p494, 13p |
| Abstrakt: |
This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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