Autor: |
Ota, Yuichi, Kaneko, Kentaro, Onuma, Takeyoshi, Fujita, Shizuo |
Předmět: |
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Zdroj: |
Journal of Physics D: Applied Physics; 6/28/2024, Vol. 57 Issue 25, p1-8, 8p |
Abstrakt: |
We investigated bandgap engineering of spinel-structured Mg B 2O4 (B = Al, Ga, In) alloys. The trend of bandgap change was tunable from approximated 7.8–3.6 eV by substituting group III cation atoms in Mg B 2O4. To evaluate the doping possibility, we have calculated the natural band alignment and doping pinning energy of the normal and inverse spinel structures of Mg B 2O4 alloys. The calculated doping pinning energies show that spinel-structured Mg B 2O4 alloys can potentially control the electron concentration, but hole doping is difficult. Our computational results are expected to provide new insights into the doping control of ultra-wide bandgap semiconductors. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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