Bandgap engineering of spinel-structured oxide semiconductor alloys.

Autor: Ota, Yuichi, Kaneko, Kentaro, Onuma, Takeyoshi, Fujita, Shizuo
Předmět:
Zdroj: Journal of Physics D: Applied Physics; 6/28/2024, Vol. 57 Issue 25, p1-8, 8p
Abstrakt: We investigated bandgap engineering of spinel-structured Mg B 2O4 (B = Al, Ga, In) alloys. The trend of bandgap change was tunable from approximated 7.8–3.6 eV by substituting group III cation atoms in Mg B 2O4. To evaluate the doping possibility, we have calculated the natural band alignment and doping pinning energy of the normal and inverse spinel structures of Mg B 2O4 alloys. The calculated doping pinning energies show that spinel-structured Mg B 2O4 alloys can potentially control the electron concentration, but hole doping is difficult. Our computational results are expected to provide new insights into the doping control of ultra-wide bandgap semiconductors. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index