| Autor: |
Minghui, Zhang, Wei, Wang, Genqiang, Chen, Rui, Xie, Feng, Wen, Fang, Lin, Yanfeng, Wang, Pengfei, Zhang, Fei, Wang, Shi, He, Yuesong, Liang, Shuwei, Fan, Kaiyue, Wang, Cui, Yu, Tai, Min, Hongxing, Wang |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/28/2024, Vol. 135 Issue 12, p1-8, 8p |
| Abstrakt: |
In this work, we demonstrate a hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with Al2O3/CeB6 gate materials. The CeB6 and Al2O3 films have been deposited by electron beam evaporation technique, sequentially. For the 4/8/12/15 μm gate length (LG) devices, the whole devices demonstrate distinct p-type normally off characteristics, and all the threshold voltage are negative; all the absolute values of leakage current density are 10−4 A/cm2 at a VGS of −11 V, exhibiting a relatively low leakage current density compared with CeB6 FETs, and this further demonstrates the feasibility of the introduction of Al2O3 to reduce the leakage current density; the maximum drain–source current density is −114.6, −96.0, −80.9, and −73.7 mA/mm, which may be benefited from the well-protected channel. For the 12 μm LG devices, the saturation carrier mobility is 593.6 cm2/V s, demonstrating a good channel transport characteristic. This work may provide a promising strategy for the application of normally off H-diamond FETs significantly. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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