Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates.

Autor:	Markov, L. K., Kukushkin, S. A., Pavluchenko, A. S., Smirnova, I. P., Sakharov, A. V., Nikolaev, A. E., Grashchenko, A. S., Osipov, A. V., Tsatsul'nikov, A. F.
Předmět:	LATTICE constants OPTICAL materials HETEROSTRUCTURES SILICON carbide
Zdroj:	Technical Physics Letters; 2023 Suppl 4, Vol. 49, pS338-S341, 4p
Abstrakt:	we present the results of fabrication of flip-chip LEDs with removed substrate from AlInGaN heterostructures grown on SiC/Si substrates synthesized by vacancy-matching atom substitution. It is shown that SiC/Si substrates are optimal from the viewpoint of matching lattice parameters, thermal conductivity, and optical characteristics of the material at a significantly lower cost. Therewith, the procedure of cutting wafers into individual chips and removal of the opaque silicon part of the substrate becomes easier, and the transparent SiC part of the substrate remaining on the chip surface creates a relief that facilitates light output. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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