| Autor: |
Kukushkin, S. A., Markov, L. K., Osipov, A. V., Svyatets, G. V., Chernyakov, A. E., Pavlov, S. I. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; 2023 Suppl 4, Vol. 49, pS327-S329, 3p |
| Abstrakt: |
the thermal characteristics of SiC/Si samples obtained by the method of coordinated substitution of atoms at different thicknesses of SiC have been experimentally investigated. It has been found that for SiC thicknesses less than 200 nm, the thermal resistance of SiC/Si is approximately equal to 2 K/W, which is the same as for pure silicon substrate. Such samples will perfectly remove heat from the light-emitting heterostructure grown on SiC/Si. With an increase in the thickness of SiC, the SiC film is detached, which leads to a loss of thermal contact between SiC and Si. The thermal resistance increases at the same time by more than two orders of magnitude. The ability to remove easily the opaque part of the substrate can form the basis of the technology for manufacturing flip-chip LED. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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