Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction.

Autor:	Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Maleev, N. A., Kuzmenkov, A. G., Vasyl'ev, A. P., Rochas, S. S., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya., Gladyshev, A. G., Denisov, D. V., Voropaev, K. O., Egorov, A. Yu., Ustinov, V. M.
Předmět:	SURFACE emitting lasers OPTICAL losses QUANTUM efficiency EPITAXY
Zdroj:	Technical Physics Letters; 2023 Suppl 4, Vol. 49, pS173-S177, 5p
Abstrakt:	Abstract—The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaA-sP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08 and 0.14% per one pass (round-trip) at temperatures of 20 and 90°C, respectively. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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