On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb).

Autor:	Zakgeim, A. L., Karandashev, S. A., Klimov, A. A., Kunkov, R. E., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A., Chernyakov, A. E.
Předmět:	ELECTRON-hole recombination ELECTRON-phonon interactions LIGHT emitting diodes CURRENT-voltage characteristics DATA distribution
Zdroj:	Semiconductors; Dec2023, Vol. 57 Issue 13, p621-631, 11p
Abstrakt:	Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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