| Abstrakt: |
A key piece for spintronic applications, the so-called electron g -factor engineering is still predominantly based on the semiconductor bulk g factor and its dependence on the bandgap energy. In nanostructures, however, the mesoscopic confinement introduces exclusive anisotropies, transforming scalar g factors into tensors, enabling different renormalization mechanisms as routes for fine-tuning the electron g factor. These questions we address in this comparative theoretical analysis between the obtained electron g -factor (tensor) anisotropies for realistic InAs | AlSb - and In 0.53 Ga 0.47 As | InP -based multilayers. The electron g -factor anisotropy, i.e., the difference between g factors for magnetic fields parallel and perpendicular to the interfaces, is analytically calculated via perturbation theory using the envelope-function approach based on the eight-band Kane model. Effects from bulk, interfacing, tunnel coupling, and structure inversion asymmetry are systematically introduced within a transparent comparative view; differences between obtained anisotropies, such as in the magnitude, sign, and other fine details, are analyzed in terms of the heterostructure parameters, mapped over different confining and tunnel-coupling regimes without requiring elaborated numerical computations. [ABSTRACT FROM AUTHOR] |
