Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype.

Autor:	Mynbaeva, M. G., Amelchuk, D. G., Smirnov, A. N., Nikitina, I. P., Lebedev, S. P., Davydov, V. Yu., Lebedev, A. A.
Předmět:	HOMOEPITAXY SILICON carbide SILICON wafers CHEMICAL vapor deposition EPITAXIAL layers EPITAXY
Zdroj:	Semiconductors; Jun2023, Vol. 57 Issue 6, p305-309, 5p
Abstrakt:	An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homo epitaxy. Hetero epitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3C-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline "seed" that determines cubic polytype of the overgrown SiC layer. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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